Sufficiently intense light exposure of a certain substrate area leads to a complete suppression of the underetching effect, and as a result, the formation of rolled-up InGaAs/GaAs tubes can be easily controlled spatially.
Here, we demonstrate illumination-controlled hydrofluoric acid (HF) etching of a buried thin AlAs sacrificial layer. Numerous existing studies offer highly sophisticated methods for precise lateral positioning of rolled-up semiconductor nanostructures by controlling the starting edges, but difficulties arise for thin layers due to the extensive, successive lithography steps involved, and ways to control the stopping point of rolling remain largely lacking without modifying the structure. Precise control over the lateral positioning and the number of windings is fundamental for the use of the tubes in optical resonators for sensors, hyperlenses, or electrical transport (curved electron gases). However, in some cases, it might be important to stimulate tube formation in certain areas and suppress tube formation outside those areas. Large arrays of periodically ordered microtubes can be fabricated by a combination of lithography and deliberate self-rolling of strained layers upon selective underetching. KIPP Iluminar Academy is a tuition-free, college-preparatory charter public elementary school and is part of the national KIPP (Knowledge Is Power Program) network of 270 schools in 20 states and Washington, DC.Rolled-up nanotech has become a powerful technology with applications in a broad range of research fields, including optofluidics, micromachinery, magnetofluidics, biophysics, nanomechanics, and waveguiding for different spectral ranges and applications. Tu Voz en Los Ángeles: Entrevista con Dra. KIPP SoCal 8th grade alumni graduate college at a rate three times higher than the national average of students from systemically under-resourced communities. KIPP SoCal 8th grade alumni matriculate to college 36% higher than the national average of students from systemically under-resourced communities.
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